ThinkSystem SR630 V2 M.2 Cable Kit
ThinkSystem SR630 V2 M.2 Cable Kit
Memorii server
There are 20 products.
ThinkSystem 32GB 3200 MHz 2Rx4 RDIMM
ThinkSystem 32GB TruDDR4 3200 MHz (2Rx4 1.2V) RDIMM
SAMSUNG 64GB DDR5 5600Mhz ECC RDIMM
Tehnologia memorieiDDR5 SDRAMCapacitatea SSD64 GBMemory Modules Quantity1Total Storage Capacity64 GBFactorul de formă al memorieiDIMM cu 288 de piniOferă o metodă de verificare a erorilorECCViteza memoriei5600MHz(PC5-44800)Caracteristici memorieRegistered
SAMSUNG 16GB DDR4 2933Mhz ECC Registered DIMM
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare16 GBFactor de Forma a memorieiDIMM 288-pinMemory Modules Quantity1Ofera metode de corectie a erorilorECCViteza de memorare2933MHz(PC4-23400)Caracteristici memorieRegistered Single RankCompliant Devi
SAMSUNG 8GB DDR4 2933MHz RDIMM single rank
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare8 GBFactor de Forma a memorieiDIMM 288-pinMemory Modules Quantity1Ofera metode de corectie a erorilorECCConfigurarea modelului de memorie1024 x 8Viteza de memorare2933MHz(PC4-23400)Caracteristici mem
SAMSUNG 32GB DDR4 2933MHz RDIMM PC4-23466U-R Dual Rank x4 Module
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare32 GBFactor de Forma a memorieiDIMM 288-pinMemory Modules Quantity1Ofera metode de corectie a erorilorECCViteza de memorare2933MHz(PC4-23400)Caracteristici memorieRegistered Dual RankCompliant Device
Samsung DRAM 16GB DDR4 RDIMM 2666MHz, 1.2V, (2Gx4)x18, 1R x 4
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare16 GBFactor de Forma a memorieiDIMM 288-pin Low ProfileMemory Modules Quantity1Ofera metode de corectie a erorilorECCViteza de memorare2666MHz(PC4-21300)CAS LatencyCL19TRCD19TRP19Caracteristici memor
Samsung DRAM 16GB DDR4 RDIMM 3200MHz, 1.2V, (1Gx8)x18, 2R x 8
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare16 GBMemory Modules Quantity1Total Storage Capacity16 GBFactorul de formă al memorieiDIMM cu 288 de piniFurnizează metoda de verificare a erorilorECCConfigurarea modelului de memorie1024 x 8Viteza me
Samsung DRAM 64GB DDR4 RDIMM 2933MHz, 1.2V, (4Gx4)x36, 2R x 4
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare64 GBFactor de Forma a memorieiDIMM 288-pinMemory Modules Quantity1Ofera metode de corectie a erorilorECCViteza de memorare2933MHz(PC4-23400)Caracteristici memorieRegistered Dual RankCompliant Device
ThinkSystem 1Gb 4-port RJ45 LOM
ThinkSystem 32GB TruDDR4 2933MHz (2Rx4 1.2V) RDIMM
ThinkSystem 16GB 2933MHz RDIMM
ThinkSystem 16GB TruDDR4 2933MHz (2Rx8 1.2V) RDIMM
ThinkSystem 16GB 2666MHz ECC UDIMM
ThinkSystem 16GB TruDDR4 2666MHz (2Rx8, 1.2V) ECC UDIMM
Samsung DRAM 32GB DDR4 RDIMM 3200MHz, 1.2V, (2Gx8)x18, 2R x 8
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare32 GBFactor de Forma a memorieiDIMM 288-pinMemory Modules Quantity1Ofera metode de corectie a erorilorECCViteza de memorare3200MHz(PC4-25600)CAS LatencyCL22Caracteristici memorieRegistered Dual RankC
ThinkSystem 32GB 2666MHz ECC UDIMM
ThinkSystem 32GB TruDDR4 2666MHz (2Rx8, 1.2V) ECC UDIMM
ThinkSystem 8GB 2666MHz ECC UDIMM
ThinkSystem 8GB TruDDR4 2666MHz (1Rx8, 1.2V) ECC UDIMM
SAMSUNG 32GB DDR4 3200MHz RDIMM Dual Rank x4 Module
Tehnologia pentru memorieDDR4 SDRAMCapacitate de stocare32 GBMemory Modules Quantity1Total Storage Capacity32 GBFactorul de formă al memorieiDIMM cu 288 de piniViteza memoriei3200MHz(PC4-25600)Caracteristici memorieRegistered Dual RankDispozitive compatib
Samsung DRAM 64GB DDR4 RDIMM 3200MHz, 1.2V, (4Gx4)x36, 2R x 4
Samsung offers a wide range of various memory solutions, allowing customers to choose the exact combination of features. So, if you are in the market for a high-performance memory solution, you need look no further than Samsung.Tehnologia pentru memorieDD
ThinkSystem RAID 9350-8i
ThinkSystem RAID 9350-8i 2GB Flash PCIe 12Gb Adapter
LN Emulex 16Gb Gen6
Lenovo Emulex 16Gb Gen6 FC Dual-port HBA
ThinkSystem 16GB 3200MHz (2Rx8, 1.2V)
ThinkSystem 16GB 3200MHz (2Rx8, 1.2V)